±15 kV air discharge according the IEC 61000-4-2 model, far exceeding standard level 4. The device is optimized for protection of high speed interfaces such as Universal Serial Bus (USB) 2.0, High Definition Multimedia Interface (HDMI), Digital Visual Interface (DVI) and other interfaces requiring very low capacitance ESD protection. The device is available in two different heights. 0.61 mm and reduced maximum height of 0.5 mm. Both versions contain identical circuits and show an identical electrical performance. Both ESD protection channels share common ground connections, but are electrically separated, thereby preventing current back drive into the adjacent channel. IP4359CX4 is fabricated using monolithic silicon technology in a single Wafer-Level Chip-Scale Package (WLCSP). These features make the IP4359CX4 ideal for use in applications requiring component miniaturization such as mobile phone handsets and other portable electronic devices."/> 亚洲精品一区二区三区四区五区,色婷婷久久综合中文久久蜜桃av,九九精品国产亚洲av日韩

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雙極性晶體管

二極管

ESD保護、TVS、濾波和信號調節ESD保護

MOSFET

氮化鎵場效應晶體管(GaN FET)

絕緣柵雙極晶體管(IGBTs)

模擬和邏輯IC

汽車應用認證產品(AEC-Q100/Q101)

IP4359CX4

Dual channel low capacitance high performance ESD protection

The IP4359CX4 is a dual channel low capacitance ElectroStatic Discharge (ESD) protection device, providing protection to downstream components from ESD voltages as high as ±15 kV contact discharge and > ±15 kV air discharge according the IEC 61000-4-2 model, far exceeding standard level 4.

The device is optimized for protection of high speed interfaces such as Universal Serial Bus (USB) 2.0, High Definition Multimedia Interface (HDMI), Digital Visual Interface (DVI) and other interfaces requiring very low capacitance ESD protection.

The device is available in two different heights. 0.61 mm and reduced maximum height of 0.5 mm. Both versions contain identical circuits and show an identical electrical performance. Both ESD protection channels share common ground connections, but are electrically separated, thereby preventing current back drive into the adjacent channel. IP4359CX4 is fabricated using monolithic silicon technology in a single Wafer-Level Chip-Scale Package (WLCSP). These features make the IP4359CX4 ideal for use in applications requiring component miniaturization such as mobile phone handsets and other portable electronic devices.

此產品已停產

Features and benefits

  • Pb-free, RoHS compliant and free of halogen and antimony (Dark Green compliant)
  • 2 ultra low input capacity rail-to-rail ESD protection diodes with C(I/O-GND) = 1.3 pF
  • Rdyn = 0.45 ?
  • Integrated ESD protection withstanding ±15 kV contact discharge and > ±15 kV air discharge, far exceeding IEC 61000-4-2 level 4
  • Standard height version (0.61 mm) available as IP4359CX4/LF
  • Reduced height version (maximum height of 0.5 mm) available as IP4359CX4/LF-H500
  • 2 × 2 solder ball WLCSP with 0.4 mm pitch

Applications

  • High-speed interface ESD protection such as USB 2.0, HDMI, DVI etc.
  • Interfaces with special requirements on low capacitive ESD protection
  • Interfaces requiring separation of the positive clamping voltage/current path

封裝

下表中的所有產品型號均已停產 。

型號 可訂購的器件編號，（訂購碼(12NC)） 狀態 標示 封裝 外形圖 回流焊/波峰焊 包裝
IP4359CX4 IP4359CX4/LF,115
(934060057115)		 Obsolete no package information
IP4359CX4/LF,135
(934060057135)		 Obsolete

環境信息

下表中的所有產品型號均已停產 。

型號 可訂購的器件編號 化學成分 RoHS RHF指示符
IP4359CX4 IP4359CX4/LF,115 IP4359CX4 rohs rhf rhf
IP4359CX4 IP4359CX4/LF,135 IP4359CX4 rohs rhf rhf
品質及可靠性免責聲明

文檔 (4)

文件名稱 標題 類型 日期
IP4359CX4 Dual channel low capacitance high performance ESD protection Data sheet 2010-08-06
AN10910 Protecting charger interfaces and typical battery charging topologies with external bypass transistors Application note 2021-04-12
nexperia_document_leaflet_WLCSP_201803_CHN WLCSP Chinese Translation Leaflet 2018-04-25
R_10001 Guideline for the laser marking layout of WLCSP devices Report 2021-01-05

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